| PART |
Description |
Maker |
| 2SK30ATM |
Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
Toshiba Semiconductor
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| EN8278B CPH5901F-TL-E CPH590112 CPH5901G-TL-E CPH5 |
N-Channel JFET and NPN Bipolar Transistor, 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| ATA12001 ATA12001D1C |
AGC transimpedence amplifier suitable for SONET OC-24 receiver, low noise RF amplifier, BISDN and HIPPI applications.
Transimpedance Amplifiers (TIAs)
AGC Transimpedance Amplifier
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| 2SA1015L A1015 2SA1015 |
PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| LT1167ACN8 LT1167ACS8 LT1167CN8 LT1167CS8 LT1167IN |
Single Resistor Gain Programmable/ Precision Instrumentation Amplifier
Precision Instrumentation Amplifier INSTRUMENTATION AMPLIFIER, 100 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8
TRANS NPN 100VCEO .5A TO-126
|
Linear Technology, Corp.
Linear Technology Corporation
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BA3632K A5800789 |
Audio LSIs > Headphone stereo amplifier > Prepower amplifier for headphone stereo
PRE / POWER AMPLIFIER FOR 1.5V HEADPHONE STEREOS
From old datasheet system
|
ROHM
|
| MCH5908 |
High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications
|
Sanyo Semicon Device
|
| TDA8920 TDA8920J TDA8920TH |
2x50 W class-D power amplifier(2x50W D绫诲???????澶у?)
2 x 50 W class-D power amplifier 80 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO24
2 x 50 W class-D power amplifier
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
